A theoretical search on the effects of nitrogen and aluminium on band offset of GaNxAsyP1-x-y/AlxGa1-xP material system

Abstract

Yeni önerilen GaNxAsyP1-x-y/AlzGa1-zP kuvantum kuyu lazer sistemlerinde kuyu içerisindeki nitrojen ve bariyer içerisindeki alüminyumun band yönelimi üzerine olan etkilerinin Model Solid Theory ve Band anti-crossing modeli kullanarak teorik olarak araştırılıp, sunuldu. Nitrojen ve alüminyumun yeni önerilen GaNxAsyP1-x-y/AlzGa1-z kuvantum kuyu lazer sisteminin band yönelimine katkı sağladığı görüldü.Anahtar kelimeler: Band yönelimi ve band offset, band anticrossing modeli, tip 1 kuvantum kuyusu.

We present a theoretical investigation of the effect of nitrogen concentration in well and aluminum concentration in barrier on band offsets of newly proposed GaNxAsyP1-x-y/GaP and GaNxAsyP1-x-y/AlzGa1-zP type I quantum well (QW) laser systems by means of using model Solid Theory and band anti-crossing model. We have calculated that the presence of nitrogen and aluminum improves the band alignment of the proposed novel material systems.Key words: Band alignment and band offset, band anti-crossing model, type Iquantum well.