A theoretical search on the effects of nitrogen and aluminium on band offset of GaNxAsyP1-x-y/AlxGa1-xP material system
| dc.contributor.advisor | Gönül, Beşire | |
| dc.contributor.author | Temiz, Mehmet | |
| dc.date.accessioned | 2020-12-29T13:32:31Z | |
| dc.date.available | 2020-12-29T13:32:31Z | |
| dc.date.submitted | 2013 | |
| dc.date.issued | 2018-08-06 | |
| dc.identifier.uri | https://acikbilim.yok.gov.tr/handle/20.500.12812/428255 | |
| dc.description.abstract | Yeni önerilen GaNxAsyP1-x-y/AlzGa1-zP kuvantum kuyu lazer sistemlerinde kuyu içerisindeki nitrojen ve bariyer içerisindeki alüminyumun band yönelimi üzerine olan etkilerinin Model Solid Theory ve Band anti-crossing modeli kullanarak teorik olarak araştırılıp, sunuldu. Nitrojen ve alüminyumun yeni önerilen GaNxAsyP1-x-y/AlzGa1-z kuvantum kuyu lazer sisteminin band yönelimine katkı sağladığı görüldü.Anahtar kelimeler: Band yönelimi ve band offset, band anticrossing modeli, tip 1 kuvantum kuyusu. | |
| dc.description.abstract | We present a theoretical investigation of the effect of nitrogen concentration in well and aluminum concentration in barrier on band offsets of newly proposed GaNxAsyP1-x-y/GaP and GaNxAsyP1-x-y/AlzGa1-zP type I quantum well (QW) laser systems by means of using model Solid Theory and band anti-crossing model. We have calculated that the presence of nitrogen and aluminum improves the band alignment of the proposed novel material systems.Key words: Band alignment and band offset, band anti-crossing model, type Iquantum well. | en_US |
| dc.language | English | |
| dc.language.iso | en | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | Attribution 4.0 United States | tr_TR |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
| dc.subject | Fizik ve Fizik Mühendisliği | tr_TR |
| dc.subject | Physics and Physics Engineering | en_US |
| dc.title | A theoretical search on the effects of nitrogen and aluminium on band offset of GaNxAsyP1-x-y/AlxGa1-xP material system | |
| dc.title.alternative | GaNxAsyP1-x-y/AlxGa1-xP materyal sisteminde nitrojen ve alüminyum?un band offset üzerine etkilerinin teorik araştırılması | |
| dc.type | masterThesis | |
| dc.date.updated | 2018-08-06 | |
| dc.contributor.department | Fizik Mühendisliği Anabilim Dalı | |
| dc.identifier.yokid | 458606 | |
| dc.publisher.institute | Fen Bilimleri Enstitüsü | |
| dc.publisher.university | GAZİANTEP ÜNİVERSİTESİ | |
| dc.identifier.thesisid | 323123 | |
| dc.description.pages | 41 | |
| dc.publisher.discipline | Diğer |
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