Show simple item record

dc.contributor.advisorÇevik, Uğur
dc.contributor.authorÇelik, Ahmet
dc.date.accessioned2020-12-30T07:07:51Z
dc.date.available2020-12-30T07:07:51Z
dc.date.submitted2006
dc.date.issued2020-12-17
dc.identifier.urihttps://acikbilim.yok.gov.tr/handle/20.500.12812/483265
dc.description.abstract%X oDOÕúPDGD, CuInSe2 LQFH ILOPLQLQ NDOÕQOÕ÷Õ LNL IDUNOÕ yöntem kullanarakbelirlendi. øON/QWHPGH, CuInSe2'nin/R÷XQOX÷XYHNWOHVLELU/R÷XQOXNOoHUYDVÕWDVÕ/ODölçüldü. Daha sonra, birim alan EDúÕQD NWOH KHVDEÕQGDQ CuInSe2LQFHILOPLQLQ NDOÕQOÕ÷ÕEHOLUOHQGL øNLQFL /QWHPGH &X ,Q YH 6H HOHPHQWOHUL LOH &XInSe2 (bulk ve ince film)/DUÕLOHWNHQOHULQLQVR÷XUPDNDWVD/ÕODUÕQÕNXOODQDUDNNDOÕQOÕNEHOLUOHQGL6R÷XUPDNDWVD/ÕODUÕ11,9- NH9 HQHUML DUDOÕ÷ÕQGD EXOXQDQ IDUNOÕ HQHUMLGH LNLQFLO X/DUPD /QWHPLNXOODQÕODUDN OoOG Bu enerjiler, Br, Sr, Mo, Cd, Te ve Ba gibi ikincil kaynaklarNXOODQÕODUDN HOGH HGLOGL øNLQFLO ND/QDNODUÕ X/DUPDN LoLQ NH9¶OLN JDPD ÕúÕQODUÕ/D/ÕQOD/DQ241$P UDG/RDNWLI KDOND ND/QDN NXOODQÕOGÕ øNLQFLO ND/QDNWDQ /D/ÕQODQDQ ;-ÕúÕQODUÕQÕ VD/PDN LoLQ, 5,9 keV'deki rezolüsyonu 0,16 keV olan bir Si(Li) dedektörNXOODQÕOGÕ $/UÕFD /DUÕLOHWNHQ ELOHúLNOHUGH VR÷XUPD NÕ/ÕODUÕQÕQ HWNLQ DWRP QXPDUDODUÕ]HULQGHNL HWNLVL YH IRWRQ HQHUMLVL/OH GH÷LúLPL WDUWÕúÕOGÕ (OGH HGLOHQ GH÷HUOHU WHRULNGH÷HUOHUOHNÕ/DVODQGÕ
dc.description.abstractIn this study, thickness of CuInSe2 thin film was determined using the two differentmethods. In the first method, the density and mass of CuInSe2 was measured by using adensitometer. Then, thickness of CuInSe2 thin film was calculated using the mass per unitarea. In the second method, thickness was determined using the attenuation coefficients ofCu, In and Se elements and CuInSe2 (bulk and thin film) semiconductors. The attenuationcoefficients were measured at 15 different energies from 11.9 to 37.3 keV by usingsecondary excitation method. These energies were obtained using secondary targets such241as Br, Sr, Mo, Cd, Te and Ba. 59.5 keV gamma rays emitted from an annular Amradioactive source were used to excite secondary sources. X-rays emitted of secondarysources were counted by a Si(Li) detector with a resolution of 0.16 keV at 5.9 keV.Additionally, the effect of absorption edges on effective atomic numbers and theirvariation with photon energy in composite semiconductor sample was discussed. Obtainedvalues were compared with theoretical values.en_US
dc.languageTurkish
dc.language.isotr
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.rightsAttribution 4.0 United Statestr_TR
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectFizik ve Fizik Mühendisliğitr_TR
dc.subjectPhysics and Physics Engineeringen_US
dc.titleEDXRF tekniğini kullanarak CuInSe2 ince filminin kalınlık tayini
dc.title.alternativeDetermination of thickness for CuInSe2 thin film using the EDXRF technique
dc.typemasterThesis
dc.date.updated2020-12-17
dc.contributor.departmentFizik Anabilim Dalı
dc.identifier.yokid159102
dc.publisher.instituteFen Bilimleri Enstitüsü
dc.publisher.universityKARADENİZ TEKNİK ÜNİVERSİTESİ
dc.identifier.thesisid182962
dc.description.pages70
dc.publisher.disciplineDiğer


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

info:eu-repo/semantics/embargoedAccess
Except where otherwise noted, this item's license is described as info:eu-repo/semantics/embargoedAccess